MTY30N50E

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 250 µA)

Temperature Coefficient (Positive)

V(BR)DSS

500

—

—

566

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 500 Vdc, VGS = 0 Vdc)

(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

10

200

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

2

—

—

7

4

—

Vdc

mV/

°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 15 Adc)

RDS(on)

—

—

0.15

Ohm

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 30 Adc)

(ID = 15 Adc, TJ = 125°C)

VDS(on)

—

—

4.1

—

5

7

Vdc

Forward Transconductance (VDS = 15 Vdc, ID = 15 Adc)

gFS

17

—

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1 MHz)

Ciss

—

7200

10080

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1 MHz)

Coss

—

775

1200

Reverse Transfer Capacitance

f = 1 MHz)

Crss

—

120

250

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

(VDD = 250 Vdc, ID = 30 Adc,

VGS = 10 Vdc,

RG = 4.7 Ω)

td(on)

—

32

60

ns

Rise Time

(VDD = 250 Vdc, ID = 30 Adc,

VGS = 10 Vdc,

RG = 4.7 Ω)

tr

—

105

175

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 4.7 Ω)

td(off)

—

160

275

Fall Time

G = 4.7 Ω)

tf

—

115

200

Gate Charge

(See Figure 8)

(VDS = 400 Vdc, ID = 30 Adc,

VGS = 10 Vdc)

QT

—

235

350

nC

(See Figure 8)

(VDS = 400 Vdc, ID = 30 Adc,

VGS = 10 Vdc)

Q1

—

35

—

(VDS = 400 Vdc, ID = 30 Adc,

VGS = 10 Vdc)

Q2

—

110

—

Q3

—

65

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 30 Adc, VGS = 0 Vdc)

(IS = 30 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

0.95

0.88

1.2

—

Vdc

Reverse Recovery Time

(See Figure 14)

(IS = 30 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

—

485

—

ns

(See Figure 14)

(IS = 30 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

—

312

—

(IS = 30 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

tb

—

173

—

Reverse Recovery Stored Charge

QRR

—

8.2

—

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25

″ from package to center of die)

LD

—

4.5

—

nH

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

LS

—

13

—

nH

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.