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STM32L151VD датащи(PDF) 82 Page - STMicroelectronics

номер детали STM32L151VD
подробное описание детали  Ultra-low-power 32-bit MCU ARM-based Cortex-M3, 384KB Flash
PDF  140 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32L151VD датащи(HTML) 82 Page - STMicroelectronics

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Electrical characteristics
STM32L151xD STM32L152xD
82/140
Doc ID 022027 Rev 6
Flash memory and data EEPROM
Table 35.
Flash memory and data EEPROM characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1.
Guaranteed by design, not tested in production.
Unit
VDD
Operating voltage
Read / Write / Erase
1.65
-
3.6
V
tprog
Programming time for
word or half-page
Erasing
-
3.28
3.94
ms
Programming
-
3.28
3.94
IDD
Average current during
the whole programming /
erase operation
TA = 25 °C, VDD = 3.6 V
-
600
900
µA
Maximum current (peak)
during the whole
programming / erase
operation
-1.5
2.5
mA
Table 36.
Flash memory and data EEPROM endurance and retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1.
Based on characterization not tested in production.
Typ Max
NCYC
(2)
Cycling (erase / write)
Program memory
TA = -40°C to
105 °C
10
--
kcycles
Cycling (erase / write)
EEPROM data memory
300
--
tRET
(2)
2.
Characterization is done according to JEDEC JESD22-A117.
Data retention (program memory) after
10 kcycles at TA = 85 °C
TRET = +85 °C
30
-
-
years
Data retention (EEPROM data memory)
after 300 kcycles at TA = 85 °C
30
-
-
Data retention (program memory) after
10 kcycles at TA = 105 °C
TRET = +105 °C
10
-
-
Data retention (EEPROM data memory)
after 300 kcycles at TA = 105 °C
10
-
-



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