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JS28F128P33TF70 датащи(PDF) 49 Page - Numonyx B.V

номер детали JS28F128P33TF70
подробное описание детали  Numonyx짰 P33-65nm Flash Memory
PDF  88 Pages
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производитель  NUMONYX [Numonyx B.V]
домашняя страница  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

JS28F128P33TF70 датащи(HTML) 49 Page - Numonyx B.V

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Datasheet
Jul 2011
49
Order Number:208034-04
P33-65nm SBC
15.2
Capacitance
15.3
AC Read Specifications
Table 23: Capacitance
Symbol
Parameter
Signals
Min
Typ
Max
Unit
Condition
Notes
CIN
Input Capacitance
Address, Data,
CE#, WE#, OE#,
RST#, CLK,
ADV#, WP#
26
7
pF
Typ temp = 25 °C,
Max temp = 85 °C,
VCC = (0 V - 3.6 V),
VCCQ = (0 V - 3.6 V),
Discrete silicon die
1,2,3
COUT
Output Capacitance
Data, WAIT
2
4
5
pF
Notes:
1.
Capacitance values are for a single die; for dual die, the capacitance values are doubled.
2.
Sampled, not 100% tested.
3.
Silicon die capacitance only, add 1 pF for discrete packages.
Table 24: AC Read Specifications - (Sheet 1 of 2)
Num
Symbol
Parameter
Min
Max
Unit
Notes
Asynchronous Specifications
R1
tAVAV
Read cycle time
Easy BGA
60
-
ns
-
TSOP
70
-
ns
-
R2
tAVQV
Address to output valid
Easy BGA
-
60
ns
-
TSOP
70
ns
-
R3
tELQV
CE# low to output valid
Easy BGA
-
60
ns
-
TSOP
70
ns
-
R4
tGLQV
OE# low to output valid
-
25
ns
1,2
R5
tPHQV
RST# high to output valid
-
150
ns
1
R6
tELQX
CE# low to output in low-Z
0
-
ns
1,3
R7
tGLQX
OE# low to output in low-Z
0
-
ns
1,2,3
R8
tEHQZ
CE# high to output in high-Z
-
20
ns
1,3
R9
tGHQZ
OE# high to output in high-Z
-
15
ns
R10
tOH
Output hold from first occurring address, CE#, or OE#
change
0-
ns
R11
tEHEL
CE# pulse width high
17
-
ns
1
R12
tELTV
CE# low to WAIT valid
-
17
ns
R13
tEHTZ
CE# high to WAIT high-Z
-
20
ns
1,3
R15
tGLTV
OE# low to WAIT valid
-
17
ns
1
R16
tGLTX
OE# low to WAIT in low-Z
0
-
ns
1,3
R17
tGHTZ
OE# high to WAIT in high-Z
-
20
ns
Latching Specifications
R101
tAVVH
Address setup to ADV# high
10
-
ns
1
R102
tELVH
CE# low to ADV# high
10
-
ns
1
R103
tVLQV
ADV# low to output valid
Easy BGA
-
60
ns
1
TSOP
-
70
ns
1



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