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AM29F040-120EEB датащи(PDF) 21 Page - Advanced Micro Devices

номер детали AM29F040-120EEB
подробное описание детали  4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
PDF  33 Pages
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производитель  AMD [Advanced Micro Devices]
домашняя страница  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29F040-120EEB датащи(HTML) 21 Page - Advanced Micro Devices

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Am29F040
21
AC CHARACTERISTICS
Read Only Operations Characteristics
Notes:
1.
Test Conditions (for -55):
Output Load: 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level, input and output: 1.5 V and 1.5 V
(for all others):
Output Load: 1 TTL gate and 100 pF
Input rise and fall times: 20 ns
Input pulse levels: 0.45 V to 2.4 V
Timing measurement reference level, input and output: 0.8 V and 2.0 V
2. Output driver disable time.
3. Not 100% tested.
Parameter Symbols
Description
Test Setup
Speed Options (Note 1)
Unit
JEDEC
Standard
-55
-70
-90
-120
-150
tAVAV
tRC
Read Cycle Time (Note 3)
Min
55
70
90
120
150
ns
tAVQV
tACC
Address to Output Delay
CE = VIL
OE = VIL
Max
55
70
90
120
150
ns
tELQV
tCE
Chip Enable to Output Delay
OE = VIL Max
55
70
90
120
150
ns
tGLQV
tOE
Output Enable to Output Delay
Max
30
30
35
50
55
ns
tEHQZ
tDF
Chip Enable to Output High Z
(Notes 2, 3)
Max
18
20
20
30
35
ns
tGHQZ
tDF
Output Enable to Output
High Z (Notes 2, 3)
18
20
20
30
35
ns
tAXQX
tOH
Output Hold Time from
Addresses, CE or OE,
Whichever Occurs First
Min
00000
ns
2.7 k
Ω
Diodes = IN3064
or Equivalent
CL
6.2 k
Ω
5.0 V
IN3064
or Equivalent
Device
Under
Test
17113E-13
Notes:
For –55: CL = 30 pF including jig capacitance
For all others: CL = 100 pF including jig capacitance
Figure 8.
Test Conditions



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