BUL416T datasheet(3/9 Pages) STMICROELECTRONICS

номер детали	BUL416T

подробное описание детали	High voltage fast-switching NPN power transistor

PDF	9 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

Logo

3 / 9 page

BUL416T

Electrical characteristics

Doc ID 16097 Rev 2

3/9

Electrical characteristics

Tcase = 25 °C unless otherwise specified.

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE = 0)

VCE = 1600 V

VCE = 1600 V Tc = 125 °C

100

500

µA

ICEO

Collector cut-off current

(IB = 0)

VCE = 800 V

250

µA

VCEO(sus)

(1)

Pulse test: pulse duration

≤ 300 µs, duty cycle ≤ 2 %.

Collector-emitter

sustaining voltage (IB = 0)

IC =100 mA

800

VEBO

Emitter-base voltage

(IC = 0)

IE = 10 mA

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 2 A

IB = 0.4 A

IC = 4 A __

IB = 1.33 A

1.2

1.5

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 2 A

_IB = 0.4 A

IC = 4 A

IB = 1.33 A

1.2

1.5

hFE

(1)

DC current gain

IC = 10 mA

VCE = 5 V

IC = 0.7 A

VCE = 5 V

Inductive load

Storage time

Fall time

IC = 3 A

IB1 = 1 A

VBE(off) = - 5 V RBB = 0

VCL = 200 V

L = 200 µH

1.8

800

µs

BUL416T датащи(PDF) 3 Page - STMicroelectronics

BUL416T датащи(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

датащи скачать

ссылки URL