ACST1635-8FP datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Characteristics

ACST1635-8FP

4/13

Doc ID 023630 Rev 1

Figure 6.

On-state characteristics

(maximum values)

Figure 7.

Surge peak on-state current versus

number of cycles

100

1000

I (A)

(V)

T max:

V = 0.9 V

R = 30 m

T = 150 °C

T = 25 °C

100

110

120

130

140

150

100

1000

Non repetitive

T initial = 25 °C

Repetitive

T = 84 °C

Number of cycles

One cycle

t = 20 ms

(A)

TSM

Figure 8.

Non repetitive surge peak on-state

current for a sinusoidal

Figure 9.

Relative variation of gate trigger

current and gate trigger voltage

versus junction temperature

100

1000

10000

0.01

0.10

1.00

10.00

A), I²t (A²s)

TSM(

t (ms)

dl /dt limitation: 100 A / µs

pulse with width t <10 ms, and

corresponding value of I²t

T initial = 25 °C

I²t

TSM

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-50

-30

-10

110

130

150

IGT Q1-Q2

VGT Q1-Q2-Q3

IGT Q3

I ,V [T ]/I ,V [T = 25 °C]

typical values

T (°C)

Figure 10.

Relative variation of holding

current and latching current versus

junction temperature

Figure 11.

Relative variation of critical rate of

decrease of main current (dI/dt)c

versus reapplied (dV/dt)c

0.0

0.5

1.0

1.5

2.0

-50

-30

-10

110

130

150

typical values

I , [T ] / I , I [T = 25 °C]

T (°C)

(dI/dt)c[(dV/dt) ]/Specified(dI/dt)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.1

1.0

10.0

100.0

j=125 °C and 150 °C

typical values

(dV/dt) (V/µs)

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