W25Q40BLSVIP datasheet(46/74 Pages) WINBOND

номер детали	W25Q40BLSVIP

подробное описание детали	2.5V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

PDF	74 Pages

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производитель	WINBOND [Winbond]

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46 / 74 page

W25Q40BL

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7.2.29 Power-down (B9h)

Although the standby current during normal operation is relatively low, standby current can be further

reduced with the Power-down instruction. The lower power consumption makes the Power-down

instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC Characteristics).

The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in

figure 27.

The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-down

instruction will not be executed. After /CS is driven high, the power-down state will entered within the time

duration of tDP (See AC Characteristics). While in the power-down state only the Release from Power-

down / Device ID instruction, which restores the device to normal operation, will be recognized. All other

instructions are ignored. This includes the Read Status Register instruction, which is always available

during normal operation. Ignoring all but one instruction makes the Power Down state a useful condition

for securing maximum write protection. The device always powers-up in the normal operation with the

standby current of ICC1.

Figure 27. Deep Power-down Instruction Sequence Diagram

W25Q40BLSVIP датащи(PDF) 46 Page - Winbond