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MPQ4558DN датащи(PDF) 2 Page - Monolithic Power Systems

номер детали MPQ4558DN
подробное описание детали  1A, 2MHz, 55V Step-Down Converter AEC-Q100 Qualified
PDF  21 Pages
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производитель  MPS [Monolithic Power Systems]
домашняя страница  http://www.monolithicpower.com
Logo MPS - Monolithic Power Systems

MPQ4558DN датащи(HTML) 2 Page - Monolithic Power Systems

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MPQ4558 – 1A, 2MHz, 55V STEP-DOWN CONVERTER, AEC-Q100 QUALIFIED
MPQ4558 Rev. 1.01
www.MonolithicPower.com
2
5/17/2013
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2013 MPS. All Rights Reserved.
ORDERING INFORMATION
Part Number
Package
Top Marking
Junction Temperature (TJ)
MPQ4558DN*
SOIC8E
MP4558DN
MPQ4558DQ**
QFN10 (3 x 3mm)
ABP
MPQ4558DQ-AEC1***
QFN10 (3 x 3mm)
ABP
-40°C to +125°C
* For Tape & Reel, add suffix –Z (e.g. MPQ4558DN–Z)
For RoHS Compliant Packaging, add suffix –LF, (e.g. MPQ4558DN–LF–Z)
** For Tape & Reel, add suffix –Z (e.g. MPQ4558DQ–Z)
For RoHS Compliant Packaging, add suffix –LF, (e.g. MPQ4558DQ–LF–Z)
***Available End Sept. 2011
PACKAGE REFERENCE
SW
EN
COMP
FB
BST
VIN
FREQ
GND
1
2
3
4
8
7
6
5
TOP VIEW
EXPOSED PAD
TOP VIEW
SW
SW
EN
COMP
FB
1
2
3
4
5
BST
VIN
VIN
FREQ
GND
10
9
8
7
6
EXPOSED PAD
ON BACKSIDE
SOIC8E
QFN10 (3mm x 3mm)
ABSOLUTE MAXIMUM RATINGS (1)
Supply Voltage (VIN).....................–0.3V to +60V
Switch Voltage (VSW)..........–0.5V to (VIN + 0.5V)
BST to SW .....................................–0.3V to +5V
All Other Pins.................................–0.3V to +5V
Continuous Power Dissipation
(TJ = +25°C)
(2)
SOIC8E……………………………………….2.5W
QFN10………………………………………. 2.5W
Junction Temperature...............................150°C
Lead Temperature ....................................260°C
Storage Temperature.............. –65°C to +150°C
Recommended Operating Conditions
(3)
Supply Voltage VIN ...........................3.8V to 55V
Output Voltage VOUT.........................0.8V to 52V
Maximum Junction Temp. (TJ) ................ 125°C
Thermal Resistance
(4)
θJA
θJC
SOIC8E...................................50 ...... 10 ... °C/W
QFN10(3mm x 3mm) ..............50 ...... 12 ... °C/W
Notes:
1) Exceeding these ratings may damage the device
2) The maximum allowable power dissipation is a function of the
maximum junction temperature TJ(MAX), the junction-to-
ambient thermal resistance θJA, and the ambient temperature
TA. The maximum allowable continuous power dissipation at
any ambient temperature is calculated by PD(MAX)=(TJ(MAX)-
TA)/ θJA. Exceeding the maximum allowable power dissipation
will cause excessive die temperature, and the regulator will go
into thermal shutdown. Internal thermal shutdown circuitry
protects the device from permanent damage.
3) The device is not guaranteed to function outside of its
operating conditions.
4) Measured on JESD51-7 4-layer board.



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