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MPQ4558DN датащи(PDF) 2 Page - Monolithic Power Systems |
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MPQ4558DN датащи(HTML) 2 Page - Monolithic Power Systems |
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2 / 21 page ![]() MPQ4558 – 1A, 2MHz, 55V STEP-DOWN CONVERTER, AEC-Q100 QUALIFIED MPQ4558 Rev. 1.01 www.MonolithicPower.com 2 5/17/2013 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. ORDERING INFORMATION Part Number Package Top Marking Junction Temperature (TJ) MPQ4558DN* SOIC8E MP4558DN MPQ4558DQ** QFN10 (3 x 3mm) ABP MPQ4558DQ-AEC1*** QFN10 (3 x 3mm) ABP -40°C to +125°C * For Tape & Reel, add suffix –Z (e.g. MPQ4558DN–Z) For RoHS Compliant Packaging, add suffix –LF, (e.g. MPQ4558DN–LF–Z) ** For Tape & Reel, add suffix –Z (e.g. MPQ4558DQ–Z) For RoHS Compliant Packaging, add suffix –LF, (e.g. MPQ4558DQ–LF–Z) ***Available End Sept. 2011 PACKAGE REFERENCE SW EN COMP FB BST VIN FREQ GND 1 2 3 4 8 7 6 5 TOP VIEW EXPOSED PAD TOP VIEW SW SW EN COMP FB 1 2 3 4 5 BST VIN VIN FREQ GND 10 9 8 7 6 EXPOSED PAD ON BACKSIDE SOIC8E QFN10 (3mm x 3mm) ABSOLUTE MAXIMUM RATINGS (1) Supply Voltage (VIN).....................–0.3V to +60V Switch Voltage (VSW)..........–0.5V to (VIN + 0.5V) BST to SW .....................................–0.3V to +5V All Other Pins.................................–0.3V to +5V Continuous Power Dissipation (TJ = +25°C) (2) SOIC8E……………………………………….2.5W QFN10………………………………………. 2.5W Junction Temperature...............................150°C Lead Temperature ....................................260°C Storage Temperature.............. –65°C to +150°C Recommended Operating Conditions (3) Supply Voltage VIN ...........................3.8V to 55V Output Voltage VOUT.........................0.8V to 52V Maximum Junction Temp. (TJ) ................ 125°C Thermal Resistance (4) θJA θJC SOIC8E...................................50 ...... 10 ... °C/W QFN10(3mm x 3mm) ..............50 ...... 12 ... °C/W Notes: 1) Exceeding these ratings may damage the device 2) The maximum allowable power dissipation is a function of the maximum junction temperature TJ(MAX), the junction-to- ambient thermal resistance θJA, and the ambient temperature TA. The maximum allowable continuous power dissipation at any ambient temperature is calculated by PD(MAX)=(TJ(MAX)- TA)/ θJA. Exceeding the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage. 3) The device is not guaranteed to function outside of its operating conditions. 4) Measured on JESD51-7 4-layer board. |
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