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MTSF3N02HD датащи(PDF) 4 Page - Motorola, Inc

номер детали MTSF3N02HD
подробное описание детали  SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM
PDF  12 Pages
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производитель  MOTOROLA [Motorola, Inc]
домашняя страница  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MTSF3N02HD датащи(HTML) 4 Page - Motorola, Inc

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MTSF3N02HD
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Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
0
0
0.4
1.6
2
0
1
3
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Region Characteristics
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
0.04
0.02
Figure 5. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 6. On–Resistance versus Drain Current
and Gate Voltage
1
100
Figure 7. On–Resistance Variation
with Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 8. Drain–to–Source Leakage Current
versus Voltage
VDS ≥ 10 V
TJ = –55°C
25
°C
100
°C
0.03
4
2
0.01
TJ = 25°C
2
4
6
5
1
1.4
1.6
1.8
2
0.02
0.05
01
2
5
6
10
0
4
12
16
2.3 V
20
0.03
0.04
3
24
8
6
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
34
4.5 V
VGS = 2.7 V
TJ = 25°C
TJ, JUNCTION TEMPERATURE (°C)
– 50
0
50
100
150
0
0.5
1.0
1.5
2.0
VGS = 4.5 V
ID = 1.9 A
125
75
25
–25
VGS = 0 V
TJ = 125°C
100
°C
1.2
5
6
2.1 V
2.5 V
1.7 V
2.9 V
1.9 V
4.5 V
VGS = 10 V
VGS = 3.8 V
TJ = 25°C
1.2
1
0
1000
0.1
25
°C
7
8
0.8
7
8
78
8
1.5 V
0.05
0.06
0.06
0.01



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