APT47N60BC3(G)

APT47N60SC3(G)

600V 47A 0.070Ω

MAXIMUM RATINGS

All Ratings: T

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Ohms

μA

nA

Volts

MIN

TYP

MAX

600

0.06

0.07

0.5

25

250

±100

2.10

3

3.9

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

T

L

dt

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Drain-Source Voltage slope (V

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

V/ns

Amps

mJ

APT47N60BC3_SC3(G)

600

47

141

±20

±30

417

3.33

-55 to 150

260

50

20

1

1800

TO-247

Super Junction MOSFET

• Ultra Low R

DS(ON)

• Low Miller Capacitance

• Avalanche Energy Rated

• Extreme dv/dt Rated

• RoHS Compliant

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-

mark of Infineon Technologies AG."

Microsemi Website - http://www.microsemi.com

G

D

S