BZB84_SER_3

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 03 — 9 June 2009

3 of 14

NXP Semiconductors

BZB84 series

Dual Zener diodes

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

BZB84-B10

VS*

BZB84-C10

US*

BZB84-B11

VT*

BZB84-C11

UT*

BZB84-B12

VU*

BZB84-C12

UU*

BZB84-B13

VV*

BZB84-C13

UV*

BZB84-B15

VW*

BZB84-C15

UW*

BZB84-B16

PT*

BZB84-C16

PB*

BZB84-B18

PU*

BZB84-C18

PC*

BZB84-B20

RP*

BZB84-C20

RQ*

BZB84-B22

PV*

BZB84-C22

PD*

BZB84-B24

PW*

BZB84-C24

PE*

BZB84-B27

PX*

BZB84-C27

PF*

BZB84-B30

PY*

BZB84-C30

PG*

BZB84-B33

PZ*

BZB84-C33

PH*

BZB84-B36

RA*

BZB84-C36

PJ*

BZB84-B39

RB*

BZB84-C39

PK*

BZB84-B43

RC*

BZB84-C43

PL*

BZB84-B47

RD*

BZB84-C47

PM*

BZB84-B51

RE*

BZB84-C51

PN*

BZB84-B56

RF*

BZB84-C56

PP*

BZB84-B62

RG*

BZB84-C62

PQ*

BZB84-B68

RH*

BZB84-C68

PR*

BZB84-B75

RJ*

BZB84-C75

PS*

Table 4.

Type number

Type number

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

forward current

-

200

mA

non-repetitive peak

reverse current

[1] -

see

Table 8, 9,

10 and 11

non-repetitive peak

reverse power dissipation

[1] -40

W