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MP2905 датащи(PDF) 11 Page - Monolithic Power Systems |
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MP2905 датащи(HTML) 11 Page - Monolithic Power Systems |
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11 / 16 page ![]() MP2905- 3V to 28V INPUT, HYSTERETIC SYNCHRONOUS STEP-DOWN CONTROLLER MP2905 Rev. 0.91 www.monolithicpower.com 11 4/18/2011 MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited. © 2011. All Rights Reserved. 3) Maximum drain-to-source voltage, VDS(MAX): it should be at least 20% higher than the input supply rail at the high-side MOSFET’s drain. 4) Total gate charge Qg: the lower, the better it will be. For high-side MOSFET, the main power loss consists of conduction loss, switching loss, and drive loss. The high-side MOSFET conduction loss can be calculated by: 2 high side _ conduction LOAD highside _ DSON PI R D − =× × Where D is the duct cycle, it’s defined by: OUT IN V D V = High-side MOSFET switching loss is calculated by: high side _ switching IN LOAD ON OFF S 1 PV I (t t ) f 2 − =× × + × Where tON is high-side MOSFET turn on time, tOFF is high-side MOSFET turn off time, fS is the switching frequency. High-side MOSFET drive loss is calculated by: high side _ drive g _ high side S drive PQ f V −− =× × Where Vdrive is the high-side MOSFET driving voltage, typical value is 5V. For low-side MOSFET, there isn’t switching loss, conduction loss is the main loss, so we’d better choice a MOSFET with lower Rds-on than high side MOSFET. The recommended Rds-on of low side MOSFET is one-third of high-side MOSFET. The low-side MOSFET loss consists of conduction loss, drive loss and body diode conduction loss. The Low-side MOSFET conduction loss is calculated by: 2 low side _ conduction LOAD low side _ DSON PI R (1 D) −− =× × − Low-side MOS drive loss is calculated by: low side _ drive g _ low side S drive PQ f V −− =× × Body diode conduction loss is calculated by: bodydiode F LOAD deadtime S P2 V I t f =× × × × Where VF is body diode forward voltage drop, tdeadtime is high-side MOSFET and low-side MOFETS transition time. Except the losses above, there still is output cap loss in both high side MOSFET and low side MOSFET. Output cap loss is defined by: 2 Cds DS DS S 1 PC V f 2 = ×× × where CDS is the output cap of MOSFET. For less switching noise, add drive resistors in series with the gate of MOSFET to slow down the transition between the high-side MOSFET and low-side MOSFET switching. Selecting the Feed Forward Capacitor The feed forward capacitor (C8 in front page typical application circuit) is a key factor to affect the frequency. It can be calculated by: 3 O FB S IN FB FB IN H FB V V 1 f(1 ) VV 1 RC8 V V (90ns 20ns ) C8 R R == × × − × +× − × Where fS is desired the frequency, VFB is feedback reference voltage, typical is 590mV, VH is output regulation hysteresis, typical value is 22mv, RFB is the equivalent value of two voltage-divided resistors. For example, in 2905 typical application: FB R1 R3 R R1 R3 + = × Select an X7R ceramic capacitor with the closest Capacitance to the value calculated as possible. Increase the Capacitance, the switching frequency decrease, and vice versa, decrease the Capacitance, the frequency increase. And output capacitor, inductor and inductor DCR will affect the frequency, too, but those are limited. The frequency calculated by the formula has a deviation within 30%. Setting the Input Capacitor The input current to the step-down converter is discontinuous, therefore a capacitor is required to supply the AC current to the step-down converter while maintaining the DC input voltage. Use low ESR capacitors for the best performance. Ceramic capacitors with X5R or X7R dielectrics are highly recommended because of their low ESR and small temperature coefficients. |
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