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MP2905 датащи(PDF) 11 Page - Monolithic Power Systems

номер детали MP2905
подробное описание детали  3V-28V Input, Hysteretic Synchronous Step-Down Controller
PDF  16 Pages
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производитель  MPS [Monolithic Power Systems]
домашняя страница  http://www.monolithicpower.com
Logo MPS - Monolithic Power Systems

MP2905 датащи(HTML) 11 Page - Monolithic Power Systems

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MP2905- 3V to 28V INPUT, HYSTERETIC SYNCHRONOUS STEP-DOWN CONTROLLER
MP2905 Rev. 0.91
www.monolithicpower.com
11
4/18/2011
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.
© 2011. All Rights Reserved.
3) Maximum drain-to-source voltage, VDS(MAX):
it should be at least 20% higher than the input
supply rail at the high-side MOSFET’s drain.
4) Total gate charge Qg: the lower, the better it
will be. For high-side MOSFET, the main power
loss consists of conduction loss, switching loss,
and drive loss. The high-side MOSFET
conduction loss can be calculated by:
2
high side _ conduction
LOAD
highside _ DSON
PI
R
D
×
Where D is the duct cycle, it’s defined by:
OUT
IN
V
D
V
=
High-side MOSFET switching loss is calculated
by:
high side _ switching
IN
LOAD
ON
OFF
S
1
PV
I
(t
t
) f
2
×
+
×
Where tON is high-side MOSFET turn on time,
tOFF is high-side MOSFET turn off time, fS is the
switching frequency.
High-side MOSFET drive loss is calculated by:
high side _ drive
g _ high side
S
drive
PQ
f
V
−−
=× ×
Where Vdrive is the high-side MOSFET driving
voltage, typical value is 5V.
For low-side MOSFET, there isn’t switching loss,
conduction loss is the main loss, so we’d better
choice a MOSFET with lower Rds-on than high
side MOSFET. The recommended Rds-on of
low side MOSFET is one-third of high-side
MOSFET. The low-side MOSFET loss consists
of conduction loss, drive loss and body diode
conduction
loss.
The
Low-side
MOSFET
conduction loss is calculated by:
2
low side _ conduction
LOAD
low side _ DSON
PI
R
(1 D)
−−
× −
Low-side MOS drive loss is calculated by:
low side _ drive
g _ low side
S
drive
PQ
f
V
−−
=× ×
Body diode conduction loss is calculated by:
bodydiode
F
LOAD
deadtime
S
P2 V
I
t
f
×
×
×
Where VF is body diode forward voltage drop,
tdeadtime is high-side MOSFET and low-side
MOFETS transition time.
Except the losses above, there still is output
cap loss in both high side MOSFET and low
side MOSFET. Output cap loss is defined by:
2
Cds
DS
DS
S
1
PC
V
f
2
= ××
×
where CDS is the output cap of MOSFET.
For less switching noise, add drive resistors in
series with the gate of MOSFET to slow down
the transition between the high-side MOSFET
and low-side MOSFET switching.
Selecting the Feed Forward Capacitor
The feed forward capacitor (C8 in front page
typical application circuit) is a key factor to
affect the frequency. It can be calculated by:
3
O
FB
S
IN
FB
FB
IN
H
FB
V
V
1
f(1
)
VV
1
RC8
V
V
(90ns
20ns
)
C8
R
R
==
×
× −
×
×
Where fS is desired the frequency, VFB is
feedback reference voltage, typical is 590mV,
VH is output regulation hysteresis, typical value
is 22mv, RFB is the equivalent value of two
voltage-divided resistors. For example, in 2905
typical application:
FB
R1 R3
R
R1 R3
+
=
×
Select an X7R ceramic capacitor with the
closest Capacitance to the value calculated as
possible.
Increase
the
Capacitance,
the
switching frequency decrease, and vice versa,
decrease the Capacitance, the frequency
increase.
And output capacitor, inductor and inductor
DCR will affect the frequency, too, but those are
limited.
The frequency calculated by the formula has a
deviation within 30%.
Setting the Input Capacitor
The input current to the step-down converter is
discontinuous, therefore a capacitor is required
to supply the AC current to the step-down
converter while maintaining the DC input
voltage. Use low ESR capacitors for the best
performance. Ceramic capacitors with X5R or
X7R dielectrics are highly recommended
because
of
their
low
ESR
and
small
temperature coefficients.



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