Electrical characteristics

STD13NM60ND, STF13NM60ND, STP13NM60ND

4/21

DocID024645 Rev 1

2

Electrical characteristics

(T

CASE

= 25 °C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source breakdown

voltage

I

D

= 1 mA, V

GS

= 0

600

V

I

DSS

Zero gate voltage drain

current (V

GS

= 0)

V

DS

= 600 V

V

DS

= 600 V, T

C

=125 °C

1

100

μA

μA

I

GSS

Gate body leakage current

(V

DS

= 0)

V

GS

= ±20 V

±100

nA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 250 μA3

4

5

V

R

DS(on)

Static drain-source on

resistance

V

GS

= 10 V, I

D

= 5.5 A

0.32

0.38

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

iss

Input capacitance

V

DS

= 50 V, f =1 MHz,

V

GS

= 0

-845

-

pF

C

oss

Output capacitance

-

47

-

pF

C

rss

Reverse transfer

capacitance

-2.5

-

pF

C

oss eq.

(1)

1.

C

oss eq.

is defined as a constant equivalent capacitance giving the same charging time as C

oss

when V

DS

increases from 0 to 80% V

DSS

Equivalent output

capacitance

V

GS

= 0, V

DS

= 0V to 480 V

-

121

-

pF

Rg

Gate input resistance

f=1 MHz Gate DC Bias=0

Test signal level=20 mV

open drain

-4.3

-

Ω

Q

g

Total gate charge

V

DD

= 480 V, I

D

= 11 A

V

GS

= 10 V

(see

Figure 18)

-

24.5

-

nC

Q

gs

Gate-source charge

-

4.8

-

nC

Q

gd

Gate-drain charge

-

17

-

nC