MTP52N06V

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(Cpk

≥ 2.0) (3)

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

—

—

66

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

—

—

—

—

10

100

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(Cpk

≥ 2.0) (3)

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

VGS(th)

2.0

—

2.7

6.4

4.0

—

Vdc

mV/

°C

Static Drain–Source On–Resistance

(Cpk

≥ 2.0) (3)

(VGS = 10 Vdc, ID = 26 Adc)

RDS(on)

—

0.019

0.022

Ohm

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 52 Adc)

(VGS = 10 Vdc, ID = 26 Adc, TJ = 150°C)

VDS(on)

—

—

—

—

1.4

1.2

Vdc

Forward Transconductance (VDS = 6.3 Vdc, ID = 20 Adc)

gFS

17

24

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

25 Vdc V

0 Vdc

Ciss

—

1900

2660

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

580

810

Reverse Transfer Capacitance

f = 1.0 MHz)

Crss

—

150

300

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

(V

30 Vd

I

52 Ad

td(on)

—

12

20

ns

Rise Time

(VDD = 30 Vdc, ID = 52 Adc,

VGS =10Vdc

tr

—

298

600

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 9.1 Ω)

td(off)

—

70

140

Fall Time

G

)

tf

—

110

220

Gate Charge

(See Figure 8)

(V

48 Vd

I

52 Ad

QT

—

125

175

nC

(See Figure 8)

(VDS = 48 Vdc, ID = 52 Adc,

Q1

—

10

—

( DS

, D

,

VGS = 10 Vdc)

Q2

—

30

—

Q3

—

40

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 52 Adc, VGS = 0 Vdc)

(IS = 52 Adc, VGS = 0 Vdc, TJ = 150°C)

VSD

—

—

1.0

0.98

1.5

—

Vdc

Reverse Recovery Time

(See Figure 14)

(I

52 Ad

V

0 Vd

trr

—

100

—

ns

(See Figure 14)

(IS = 52 Adc, VGS = 0 Vdc,

ta

—

80

—

( S

,

GS

,

dIS/dt = 100 A/µs)

tb

—

20

—

Reverse Recovery Stored Charge

QRR

—

0.341

—

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25

″ from package to center of die)

LD

—

—

3.5

4.5

—

—

nH

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

LS

—

7.5

—

nH

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) Reflects typical values.

Cpk =

Max limit – Typ

3 x SIGMA