STPS2200 datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

DocID024381 Rev 1

3/9

STPS2200

Characteristics

Figure 1. Average forward power dissipation

versus average forward current

Figure 2. Forward voltage drop versus forward

current

PF(AV)(W)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

δ=tp/T

δ = 0.05

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

IF(AV)(A)

IF(A)

1.E-02

1.E-01

1.E+00

1.E+01

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

j=125°C

(Typical values)

j=25°C

(Maximum values)

j=25°C

(Typical values)

Tj = 125°C

(Maximum values)

VF(V)

Figure 3. Reverse leakage current versus

reverse voltage applied (typical values)

Figure 4. Junction capacitance versus reverse

voltage applied (typical values)

IR(mA)

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

100

120

140

160

180

200

Tj = 150 °C

Tj = 50 °C

Tj = 100 °C

Tj = 125 °C

Tj = 25 °C

Tj = 75 °C

VR(V)

C(pF)

100

1000

100

1000

VR(V)

F = 1 MHz

VOSC = 30 mV

RMS

Tj = 25 °C

Figure 5. Relative variation of thermal

impedance junction to lead versus pulse

duration (SMB)

Figure 6. Relative variation of thermal

impedance junction to lead versus pulse

duration (SMBflat)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

SMB

Zth(j-l)/Rth(j-l)

tp(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

SMBflat

tp(s)

Zth(j-l)/Rth(j-l)

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