2SC3265LT1 datasheet(1/1 Pages) WINNERJOIN

номер детали	2SC3265LT1

подробное описание детали	NPN EPITAXIAL SILICON TRANSISTOR

PDF	1 Pages

Scroll/Zoom	100%

производитель	WINNERJOIN [SHENZHEN YONGERJIA INDUSTRY CO.,LTD]

домашняя страница	http://www.wej.cn

Logo

1 / 1 page

WEJ

ELECTRONIC

CO.,LTD

to 2SA1298LT1

Dissipation:Pc=225mW

Complement

Collector Current:Ic=500mA

Collector

(Tc=25 C)

o

ABSOLUTE MAXIMUM RATINGS

(Ta=25 C)

o

Symbol

Rating

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

Ta=25 C*

o

V

Ic

P

T

CBO

CEO

EBO

D

j

stg

V

mA

mW

C

O

C

Characteristic

NPN EPITAXIAL SILICON TRANSISTOR

2 S C 3 2 6 5 L T 1

*Total Device

Pulse Test: Pulse Width 300uS ,Duty cycle

2%

2SC3265LTI=A6

#

Dissipation:FR=1X0.75X0.062 in Board ,Derate 25 C

o

40

25

6

500

225

150

-55-150

Electrical Characteristics

(Ta=25 C)

o

Symbol

Test Conditions

Unit

MAX.

TYP.

MIN.

Emitter-Base Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Output Capacitance

Current Gain-Bandwidth Product

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage#

Collector

Cutoff Current

Emitter Cutoff Current

DC Current Gain

Base-Emitter Saturation Voltage

Base-Emitter Voltage

BV

CBO

CEO

I

h

V

C

EBO

FE1

FE2

FE3

CE(sat)

BE(sat)

BE

ob

BV

I

f

EBO

CBO

T

I =100uA

I =1mA

I =100uA

C

E

I =0

V

=35V, I =0

V

=6V, I =0

V

=1V, I =5mA

V

=1V, I =50mA

V

=1V, I =500mA

I =500mA, I =50mA

I

=1V, I =10mA

V

=10V, I =0,f=1MHz

V

=10V, I =50mA

E

B

C

CB

E

EB

C

CE

C

CE

C

CE

C

B

C

B

CE

C

CB

E

CE

C

V

nA

40

25

6

45

85

30

100

300

0.5

1.2

1

100

PF

MHz

V

160

0.28

0.98

0.66

9

190

Characteristic

3

1

2

SOT-23

1.BASE

2.EMITTER

3.COLLECTOR

1.

1.3

2.4

Unit:mm

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

RoHS

Аналогичный номер детали - 2SC3265LT1

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SC3265	135Kb / 3P	NPN EPITAXIAL TYPE (LOW FREQUENCY POWER AMPLIFIER, POWER SWITCHING APPLICATIONS)
Guangdong Kexin Industr...	2SC3265	36Kb / 1P	Silicon NPN Epitaxial
Toshiba Semiconductor	2SC3265	86Kb / 3P	Low Frequency Power Amplifier Applications Power Switching Applications
	2SC3265	184Kb / 4P	Low Frequency Power Amplifier Applications Power Switching Applications
	2SC3265	184Kb / 4P	Low Frequency Power Amplifier Applications Power Switching Applications

More results

Аналогичное описание - 2SC3265LT1

производитель	номер детали	датащи	подробное описание детали
Samsung semiconductor	2N6516	35Kb / 1P	NPN EPITAXIAL SILICON TRANSISTOR
	BCW33	27Kb / 1P	NPN EPITAXIAL SILICON TRANSISTOR
	BCW60B	34Kb / 1P	NPN EPITAXIAL SILICON TRANSISTOR
	BCX70G	34Kb / 1P	NPN EPITAXIAL SILICON TRANSISTOR
Fairchild Semiconductor	BC237	45Kb / 4P	NPN EPITAXIAL SILICON TRANSISTOR
	BC846	68Kb / 3P	NPN EPITAXIAL SILICON TRANSISTOR
	FJN3301R	69Kb / 4P	NPN Epitaxial Silicon Transistor
	FJN3307R	37Kb / 4P	NPN Epitaxial Silicon Transistor
	FJN3308R	36Kb / 4P	NPN Epitaxial Silicon Transistor
	FJNS3201R	69Kb / 4P	NPN Epitaxial Silicon Transistor

More results

2SC3265LT1 датащи(PDF) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

2SC3265LT1 датащи(HTML) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

Аналогичный номер детали - 2SC3265LT1

Аналогичное описание - 2SC3265LT1

Html Pages

1

датащи скачать

ссылки URL