CSD19531KCS

SLPS407 – SEPTEMBER 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

Drain to Source Voltage

100

V

Drain to Source Leakage Current

1

μA

Gate to Source Leakage Current

100

nA

Gate to Source Threshold Voltage

2.2

2.7

3.3

V

7.3

8.8

m

Ω

Drain to Source On Resistance

6.4

7.7

m

Ω

Transconductance

137

S

Dynamic Characteristics

Input Capacitance

2980

3870

pF

Output Capacitance

560

728

pF

Reverse Transfer Capacitance

13

17

pF

Series Gate Resistance

1.3

2.6

Ω

Gate Charge Total (10V)

38

nC

Gate Charge Gate to Drain

7.5

nC

Gate Charge Gate to Source

11.9

nC

Gate Charge at Vth

7.3

nC

Output Charge

98

nC

Turn On Delay Time

8.4

ns

Rise Time

7.2

ns

Turn Off Delay Time

16

ns

Fall Time

4.1

ns

Diode Characteristics

Diode Forward Voltage

0.9

1

V

Reverse Recovery Charge

270

nC

di/dt = 300A/

μs

Reverse Recovery Time

83

ns

THERMAL CHARACTERISTICS

PARAMETER

MIN

TYP

MAX

UNIT

Thermal Resistance Junction to Case

0.7

°C/W

Thermal Resistance Junction to Ambient

62

°C/W

2

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