2SB985 datasheet(1/1 Pages) WINNERJOIN

номер детали	2SB985

подробное описание детали	TRANSISTOR (PNP)

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WEJ

ELECTRONIC

CO.,LTD

2SB985 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM:

1

W (Tamb=25

℃)

Collector current

ICM:

-3

A

Collector-base voltage

V(BR)CBO:

-60

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=

-10µA, IE=0

-60

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=

-1mA, IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-10µA, IC=0

-6

V

Collector cut-off current

ICBO

VCB=-40V, IE=0

-1

µA

Emitter cut-off current

IEBO

VEB=-4V, IC=0

-1

µA

hFE(1)

VCE=-2V, IC=-100mA

100

560

DC current gain

hFE(2)

VCE=-2V, IC=-3A

40

Collector-emitter saturation voltage

VCE(sat)

IC=-2A, IB=-100mA

-0.7

V

Base-emitter saturation voltage

VBE(sat)

IC=-2A, IB=-100mA

-1.2

V

Transition frequency

fT

VCE=-10V, IC=-50mA

100

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

50

pF

CLASSIFICATION OF hFE(1)

Rank

R

S

T

U

Range

100-200

140-280

200-400

280-560

TO-92MOD

1. EMITTER

2. COLLECTOR

3. BASE

123

2SB985

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

RoHS

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