ALD1106SB datasheet(2/4 Pages) ALD

2 / 4 page

ALD1106/ALD1116

Advanced Linear Devices

ABSOLUTE MAXIMUM RATINGS

Drain-source voltage, VDS

13.2V

Gate-source voltage, VGS

13.2V

Power dissipation

500 mW

Operating temperature range

PA, SA, PB, SB package

°C to +70°C

DA, DB package

-55

°C to +125°C

Storage temperature range

-65

°C to +150°C

Lead temperature, 10 seconds

+260

°C

Gate Threshold

0.4

0.7

1.0

0.4

0.7

1.0

IDS = 1.0µA VGS = VDS

Voltage

Offset Voltage

VOS

IDS = 10µA VGS = VDS

VGS1-VGS2

Gate Threshold

Temperature

TCVT

-1.2

mV/

°C

Drift 2

On Drain

IDS (ON)

3.0

4.8

3.0

4.8

VGS = VDS = 5V

Current

Transconductance

GIS

1.0

1.8

1.0

1.8

mmho VDS = 5V IDS= 10mA

Mismatch

∆Gfs

0.5

Output

GOS

200

µmho VDS = 5V IDS = 10mA

Conductance

Drain Source

RDS (ON)

350

500

350

500

Ω

VDS = 0.1V VGS = 5V

On Resistance

Drain Source

On Resistence

∆DS (ON)

0.5

VDS = 0.1V VGS = 5V

Mismatch

Drain Source

Breakdown

BVDSS

IDS = 1.0µA VGS = 0V

Voltage

Off Drain

IDS (OFF)

400

VDS =12V VGS = 0V

Current 1

TA = 125°C

Gate Leakage

IGSS

0.1

VDS = 0V VGS = 12V

Current

TA = 125°C

Input

CISS

Capacitance 2

OPERATING ELECTRICAL CHARACTERISTICS

TA = 25°C unless otherwise specified

ALD1106

ALD1116

Test

Parameter

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Conditions

Notes:

Consists of junction leakage currents

Sample tested parameters

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