BAV23_SER_7

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Product data sheet

Rev. 07 — 19 March 2010

6 of 13

NXP Semiconductors

BAV23 series

Dual high-voltage switching diodes

8.

Test information

FR4 PCB, standard footprint

(1) Single diode loaded.

(2) Double diode loaded.

Fig 4.

Diode capacitance as a function of reverse

voltage; typical values

Fig 5.

Forward current as a function of ambient

temperature; derating curves

mbg447

04

8

6

2

1.0

0.8

0.2

0.6

0.4

(pF)

0

200

150

50

100

006aab214

100

200

300

(mA)

0

(2)

(1)

Fig 6.

Reverse recovery time test circuit and waveforms

trr

(1)

t

output signal

t

10 %

90 %

input signal

D.U.T.

SAMPLING

OSCILLOSCOPE

mga881