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CDBW46-G датащи(PDF) 1 Page - Comchip Technology |
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CDBW46-G датащи(HTML) 1 Page - Comchip Technology |
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1 / 4 page ![]() CDBW46-G Mechanical data Case: SOD-123, Molded Plastic - Terminals: Solderable per MIL-STD-202, Method 208 - Page 1 QW-BA018 Small Signal Schottky Diodes REV:B °C °C °C/W mW mA V 150 -55 to +150 625 200 100 Tj TSTG PD VRRM VRWM VR IFRM Junction temperature Storage temperature Power dissipation Forward surge Forward current (Note 1) Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage Repetitive Peak Forward current (Note 1) Parameter Conditions Symbol Limits Unit P F µA V 12 0.25 0.45 1.0 CT IR VF Diode capacitance Reverse Voltage Leakage current Forward voltage (Note 2) Parameter Conditions Symbol Min Typ Max Unit IF1 = 0.1 mA RΘJA Thermal Resistance Junction to ambient air IFSM 350 750 mA SOD-123 Dimensions in inches and (millimeters) Comchip Technology CO., LTD. Reverse Voltage: 100 Volts Forward Current: 150 mA RoHS Device Features -Design for mounting on small surface. -High breakdown voltage. -Low trun-on voltage. -Guard ring construction for transient protection. mA 150 IF Forward continuous current @tp<1.0s, Duty Cycle<50% @tp<10ms IF2 = 10mA IF3 = 250mA VR1 = 1.5V VR2 = 10V VR3 = 50V VR4 = 75V 0.3 0.5 1 2 20 VR=1V, f = 1 MHZ VR=0V, f = 1 MHZ 100 VR Reverse breakdown voltage (Note 2) IR=100µA V Notes: 1.Part mounted on FR-4 board with recommended pad layout. 2.Short duration pulse test used to minimize self-heating effect. - Approx. Weight: 0.04 gram Comchip S M D D i o d e S p e c i a l i s t 0.026(0.65) 0.018(0.45) 0.152(3.85) 0.140(3.55) 0.067(1.70) 0.059(1.50) 0.110(2.80) 0.102(2.60) 0.049(1.25) 0.041(1.05) 0.006(0.15) Max. 0.02(0.50) REF 0.004(0.10) Max. - + Maximum Ratings (at Ta=25°C unless otherwise noted) Electrical Characteristics (at Ta=25°C unless otherwise noted) + - |
Аналогичный номер детали - CDBW46-G |
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Аналогичное описание - CDBW46-G |
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