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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APA0713 датащи(PDF) 3 Page - Anpec Electronics Coropration |
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APA0713 датащи(HTML) 3 Page - Anpec Electronics Coropration |
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3 / 19 page  Copyright © ANPEC Electronics Corp. Rev. A.2 - Apr., 2012 APA0713 www.anpec.com.tw 3 APA0713 Symbol Parameter Test Conditions Min. Typ. Max. Unit VOS Output Offset Voltage RL = 8 Ω, RF = 10kΩ 20 mV IDD Supply Current BTL mode, RF = 10k Ω 0.9 1.8 mA IDD(SD) Supply Current, Shutdown Mode RF = 10k Ω 0.1 2 µA |IH| Shutdown, VI = VDD 1 µA |IL| Shutdown, VI = 0V 1 µA Operating characteristic, VDD = 3.3V, TA = 25 °C, RL = 8Ω THD+N = 1%, BTL mode, RL = 8 Ω 400 PO Output Power (Note 3) THD+N = 1%, BTL mode, RL = 4 Ω 600 mW THD+N Total Harmonic Distortion Plus Noise (Note 1) PO = 280mW, BTL mode, RL = 8 Ω 0.15 % Bom Maximum Output Power Bandwidth Gain = 2, THD+N = 2% 20 KHz B1 Unity-Gain Bandwidth Open Loop 2 MHz PSRR Power Supply Rejection Ratio (Note1) CB = 1 µF, BTL mode, RL = 8Ω 74 dB Vn Noise Output Voltage Gain = 1, CB = 0.1 µF 28 µV(rms) TWU Wake-up time CB = 1 µF 380 ms Electrical Characteristics Electrical Characteristics at Specified Free - Air Temperature V DD = 3.3V, TA = 25°C (unless otherwise noted) V DD= 5V, TA= 25°C (unless otherwise noted) APA0713 Symbol Parameter Test Conditions Min. Typ. Max. Unit VOS Output Offset Voltage RL = 8 Ω, RF = 10KΩ 20 mV BTL mode, RF = 10 K Ω 1.3 2.6 IDD Supply Current SE mode, RF = 10 K Ω 0.75 1.5 mA IDD(SD) Supply Current, Shutdown Mode RF = 10 K Ω 0.1 2 µA |IH| Shutdown, VI = VDD 1 µA |IL| Shutdown, VI = 0V 1 µA Operating characteristic, VDD = 5V, TA = 25 °C, RL = 8Ω THD+N = 1%, BTL mode, RL = 8 Ω 900 mW PO Output Power (Note 3) THD+N = 1%, BTL mode, RL = 4 Ω 1.5 W THD+N Total Harmonic Distortion Plus Noise (Note 3) PO = 630mW, BTL mode, RL = 8 Ω 0.15 % Bom Maximum Output Power Bandwidth Gain = 2, THD+N = 2% 20 KHz B1 Unity-Gain Bandwidth Open Loop 2 MHz PSRR Power Supply Rejection Ratio (Note 3) CB = 1 µF, BTL mode, RL = 8Ω 74 dB Vn Noise Output Voltage Gain = 1, CB = 0.1 µF 28 µV(rms) Twu Wake-up time CB = 1 µF 400 ms Note 3 : Output power is measured at the output terminals of device at f=1KHz. |
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