TLP181

2009-11-12

3

Characteristic

Symbol

Rating

Unit

Forward current

50

mA

Forward current detating

−1.4 (Ta

≥89°C)

mA / °C

Pulse forward current

(100μs pulse, 100pps)

1

A

Reverse voltage

5

V

Junction temperature

125

°C

Collector

−emitter voltage

80

V

Emitter

−collector voltage

7

V

Collector current

50

mA

Collector power dissipation

(1 Circuit)

150

mW

Collector power dissipation

derating (1 Circuit Ta ≥ 25°C)

−1.5

mW / °C

Junction temperature

125

°C

Storage temperature range

−55 to 125

°C

Operating temperature range

−55 to 110

°C

Lead soldering temperature

260 (10s)

°C

Total package power dissipation

200

mW

Total package power dissipation

derating (Ta ≥ 25°C)

−2.0

mW / °C

Isolation voltage

(AC, 1min., R.H. ≤ 60%)

(Note 1)

3750

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(Note 1) Device considered a two

−terminal device: Pin1, 3 shorted together and pins 4, 6 shorted together

Recommended Operating Conditions

Characteristic

Symbol

Min

Typ.

Max

Unit

Supply voltage

―

5

48

V

Forward current

―

16

20

mA

Collector current

―

1

10

mA

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.