MOSFET

Page 2

REV:A

QW-BTR40

Comchip Technology CO., LTD.

Symbol

Parameter

Conditions

Typ

Max

Unit

,

Ω

Min

Drain-Source breakdown voltage

Gate-body leakage

Zero gate voltage drain current

Gate-threshold voltage (note 1)

Forward transconductance (note 1)

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time (note 1,2)

Rise time (note 1,2)

50

0.8

0.12

V

±100

0.5

3.5

6

27

13

6

5

18

V

nA

μ

A

V

Ω

S

pF

ns

1.5

Off characteristics

Dynamic characteristics (note 2)

Switching Characteristics

Turn-off delay time (note 1,2)

36

Fall time (note 1,2)

14

100

n

A

Body diode forward voltage (note 1)

1.4

Drain-source body diode characteristics

V

Note:

1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2%

2. These parameters have no way to verify.

On characteristics

Static drain-source on-resistance

(note 1)

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