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SSM3J331R датащи(PDF) 1 Page - Toshiba Semiconductor

номер детали SSM3J331R
подробное описание детали  Power Management Switches
PDF  9 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM3J331R датащи(HTML) 1 Page - Toshiba Semiconductor

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SSM3J331R
1
MOSFETs Silicon P-Channel MOS (U-MOS)
SSM3J331R
SSM3J331R
SSM3J331R
SSM3J331R
1.
1.
1.
1. Applications
Applications
Applications
Applications
•
Power Management Switches
2.
2.
2.
2. Features
Features
Features
Features
(1)
1.5-V gate drive voltage.
(2)
Low drain-source on-resistance
: RDS(ON) = 150 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 100 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 75 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 55 mΩ (max) (@VGS = -4.5 V)
3.
3.
3.
3. Packaging and Pin Configuration
Packaging and Pin Configuration
Packaging and Pin Configuration
Packaging and Pin Configuration
SOT-23F
1. Gate
2. Source
3. Drain
2012-07-19
Rev.3.0


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