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2SC3710A датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали 2SC3710A
подробное описание детали  High-Power Switching Applications
PDF  5 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3710A датащи(HTML) 2 Page - Toshiba Semiconductor

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2SC3710A
2010-12-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 80 V, IE = 0
10
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
10
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
80
V
hFE (1)
(Note)
VCE = 1 V, IC = 1 A
70
240
DC current gain
hFE (2)
VCE = 1 V, IC = 6 A
40
Collector-emitter saturation voltage
VCE (sat)
IC = 6 A, IB = 0.3 A
0.2
0.4
V
Base-emitter saturation voltage
VBE (sat)
IC = 6 A, IB = 0.3 A
0.9
1.2
V
Transition frequency
fT
VCE = 5 V, IC = 1 A
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
220
pF
Turn-on time
ton
0.2
Storage time
tstg
1
Switching time
Fall time
tf
IB1 = 0.3 A,IB2 = 0.3 A,
duty cycle ≤ 1%
0.2
μs
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
20 μs
VCC ≈ 30 V
Output
IB2
IB1
Input
Lot No.
NOTE 2:
C3710A
Characteristics
indicator
Part No. (or abbreviation code)
Note 2 : A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.



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