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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC3423Y датащи(PDF) 2 Page - Toshiba Semiconductor |
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2SC3423Y датащи(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page  2SC3423 2006-11-09 2 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 150 V, IE = 0 ― ― 0.1 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 0.1 μA DC current gain hFE (Note) VCE = 5 V, IC = 10 mA 80 ― 240 Collector-emitter saturation voltage VCE (sat) IC = 10 mA, IB = 1 mA ― ― 1.0 V Base-emitter voltage VBE VCE = 5 V, IC = 10 mA ― ― 0.8 V Transition frequency fT VCE = 5 V, IC = 10 mA ― 200 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 1.8 ― pF Note: hFE classification O: 80 to 160, Y: 120 to 240 Marking C3423 Part No. (or abbreviation code) Characteristics indicator Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. |
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