2SA2154

2007-11-01

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA2154

General-Purpose Amplifier Applications

• High voltage and high current

• Complementary to 2SC6026

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cutoff current

⎯

⎯

−0.1

μA

Emitter cutoff current

⎯

⎯

−0.1

μA

DC current gain

120

⎯

400

⎯

Collector-emitter saturation voltage

⎯

−0.18

−0.3

V

Transition frequency

80

⎯

⎯

MHz

Collector output capacitance

⎯

1.6

⎯

pF

( ) marking symbol

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-1E1A

Weight: 0.6 mg (typ.)

fSM

1.BASE

2.EMITTER

3.COLLECTOR

0.1±0.05

3

0.8±0.05

1.0±0.05

1

2

0.1±0.05

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

−50

V

Emitter-base voltage

−5

V

Collector current

−100

mA

Base current

−30

mA

Collector power dissipation

50

mW

Junction temperature

150

°C

Storage temperature range

−55~150

°C

Type Name

8F