02DZ2.0~02DZ24

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Planar Type

02DZ2.0~02DZ24

Constant Voltage Regulation Applications

Reference Voltage Applications

The mounting of four devices on an ultra-compact package allows the

number of parts and the mounting cost to be reduced.

Nominal voltage tolerance about ±2.5%

(2.0V~24V)

Characteristic

Symbol

Rating

Unit

Power dissipation

P*

200

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

*: Mounted on a glass epoxy circuit board of 20 × 20mm, pad

dimensions of 4 × 4mm.

Electrical Characteristics

(See Pages 3~5.)

JEDEC

−

JEITA

−

TOSHIBA

1-1E1A

Weight: 4.5mg (typ.)

Unit: mm