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Motorola TMOS Power MOSFET Transistor Device Data

Advance Information

HDTMOS E-FET™

High Density Power FET

N–Channel Enhancement–Mode Silicon Gate

This advanced high cell density HDTMOS power FET is

designed to withstand high energy in the avalanche and commuta-

tion modes. This new energy efficient design also offers a

drain–to–source diode with a fast recovery time. Designed for low

voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating area are critical and offer additional safety margin

against unexpected voltage transients.

• Avalanche Energy Specified

• Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

• Diode Is Characterized for Use In Bridge Circuits

• IDSS and VDS(on) Specified at Elevated Temperature

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

30

Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

VDGR

30

Vdc

Gate–to–Source Voltage — Continuous

— Non–Repetitive (tp

≤ 10 ms)

VGS

VGSM

± 20

± 20

Vdc

Vpk

Drain Current — Continuous

°C

ID

ID

IDM

42

20

126

Adc

Apk

Total Power Dissipation

Derate above 25

°C

PD

74

0.592

Watts

W/

°C

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 42 Apk, L = 0.25 mH, RG = 25 Ω)

EAS

220

mJ

Thermal Resistance

Junction to Case

Junction–to–Ambient

R

θJC

R

θJA

1.67

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from Case for 5 seconds

TL

260

°C

This document contains information on a new product. Specifications and information herein are subject to change without notice.

E–FET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

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by MTP1302/D

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SEMICONDUCTOR TECHNICAL DATA

CASE 221A–06

TO–220AB

MTP1302

TMOS POWER FET

42 AMPERES

30 VOLTS

RDS(on) = 22 mW

™