IXTP76P10T datasheet(1/6 Pages) IXYS

номер детали	IXTP76P10T

подробное описание детали	TrenchP Power MOSFETs

PDF	6 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 6 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

- 100

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

- 100

V

GSS

Continuous

±15

V

GSM

Transient

±25

V

I

D25

T

C = 25°C

- 76

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

- 230

A

I

A

T

C = 25°C

- 38

A

E

AS

T

C = 25°C1

J

P

D

T

C = 25°C

298

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO-220 & TO-247)

1.13 /10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-220

3.0

g

TO-247

6.0

g

DS100024B(01/13)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = - 250μA

-100

V

GS(th)

V

DS = VGS, ID = - 250μA

- 2.0

- 4.0

V

I

GSS

V

GS = ±15V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS, VGS = 0V

- 15

μA

T

J = 125°C

- 750

μA

R

DS(on)

V

GS = -10V, ID = 0.5 • ID25, Note 1

25 m

Ω

TrenchPTM

Power MOSFETs

P-Channel Enhancement Mode

Avalanche Rated

IXTA76P10T

IXTP76P10T

IXTH76P10T

V

DSS

= - 100V

I

D25

= - 76A

R

DS(on) ≤

≤≤≤≤

25m

Ω

Features

International Standard Packages

Avalanche Rated

Extended FBSOA

Fast Intrinsic Diode

Low R

DS(ON) and QG

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

High-Side Switching

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

Current Regulators

Battery Charger Applications

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247 (IXTH)

G

S

D

D (Tab)

TO-263 AA (IXTA)

G

S

D (Tab)

G

D S

TO-220AB (IXTP)

D (Tab)

D

S

G

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