RL201-G Thru. RL207-G

Forward Current: 2.0A

Reverse Voltage: 50 to 1000V

RoHS Device

General Purpose Silicon Rectifier

QW-BG011

Page 1

REV:B

Features

-Diffused Junction.

-Low forward voltage drop.

-Low reverse leakage current.

-High current capability.

Mechanical data

-Case: JEDEC DO-15 molded plastic.

-Epoxy: UL94V-0 rate flame retardant

-Polarity: Color band denotes cathode end

Mounting position: Any

-Weight: 0.39gram

Maximum Ratings and Electrical Characteristics

Ratings at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load derate current by 20%.

Parameter

Symbol

Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak forward surge current, 8.3ms single

half sine-wave superimposed on rated load

(JEDEC method)

Maximum forward voltage at 2.0A DC

Maximum reverse current

at rated DC blocking voltage

Operating temperature range

Storage temperature range

Typical junction capacitance (Note 1)

Typical thermal resistance (Note 2)

RL201-G

50

35

50

2.0

60

1.1

5

50

20

40

-55 ~ +150

-55 ~ +150

V

V

V

A

A

V

pF

°C

°C

μA

°C/W

RL202-G

100

70

100

RL203-G

200

140

200

RL204-G

400

280

400

RL205-G

600

420

600

RL206-G

800

560

800

RL207-G

1000

700

1000

NOTES:

1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Thermal resistance junction to ambient.

Dimensions in inches and (millimeter)

DO-15

0.300(7.6)

1.000(25.40) Min.

0.141(3.6) DIA.

0.035(0.9) DIA.

0.028(0.7) DIA.

0.102(2.6) DIA.

0.228(5.8)

1.000(25.40) Min.

Company reserves the right to improve product design , functions and reliability without notice.

Comchip Technology CO., LTD.