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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MCP6044T-E/ST датащи(PDF) 3 Page - Microchip Technology |
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MCP6044T-E/ST датащи(HTML) 3 Page - Microchip Technology |
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3 / 40 page  2001-2013 Microchip Technology Inc. DS21669D-page 3 MCP6041/2/3/4 AC ELECTRICAL CHARACTERISTICS MCP6043 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS FIGURE 1-1: Chip Select (CS) Timing Diagram (MCP6043 only). Electrical Characteristics: Unless otherwise indicated, V DD = +1.4V to +5.5V, VSS = GND, TA = 25°C, VCM =VDD/2, VOUT VDD/2, VL =VDD/2, RL = 1 Mto VL, and CL = 60 pF (refer to Figure 1-2 and Figure 1-3). Parameters Sym Min Typ Max Units Conditions AC Response Gain Bandwidth Product GBWP — 14 — kHz Slew Rate SR — 3.0 — V/ms Phase Margin PM — 65 — ° G = +1 V/V Noise Input Voltage Noise Eni —5.0 — µVP-P f = 0.1 Hz to 10 Hz Input Voltage Noise Density eni — 170 — nV/ Hz f = 1 kHz Input Current Noise Density ini —0.6 — fA/ Hz f = 1 kHz Electrical Characteristics: Unless otherwise indicated, V DD = +1.4V to +5.5V, VSS = GND, TA = 25°C, VCM =VDD/2, VOUT VDD/2, VL =VDD/2, RL = 1 Mto VL, and CL = 60 pF (refer to Figure 1-2 and Figure 1-3). Parameters Sym Min Typ Max Units Conditions CS Low Specifications CS Logic Threshold, Low VIL VSS —VSS+0.3 V CS Input Current, Low ICSL —5 — pA CS = VSS CS High Specifications CS Logic Threshold, High VIH VDD–0.3 — VDD V CS Input Current, High ICSH —5 — pA CS = VDD CS Input High, GND Current ISS —-20 — pA CS = VDD Amplifier Output Leakage, CS High IOLEAK —20— pA CS = VDD Dynamic Specifications CS Low to Amplifier Output Turn-on Time tON — 2 50 ms G = +1V/V, CS = 0.3V to VOUT = 0.9VDD/2 CS High to Amplifier Output High-Z tOFF — 10 — µs G = +1V/V, CS = VDD–0.3V to VOUT = 0.1VDD/2 Hysteresis VHYST —0.6 — V VDD = 5.0V VIL High-Z tON VIH CS tOFF VOUT -20 pA High-Z ISS ICS 5pA -20 pA -0.6 µA (typical) (typical) (typical) (typical) |
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