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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PIC16F684 датащи(PDF) 136 Page - Microchip Technology |
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PIC16F684 датащи(HTML) 136 Page - Microchip Technology |
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136 / 192 page  PIC16F684 DS41202F-page 134 © 2007 Microchip Technology Inc. 15.4 DC Characteristics: PIC16F684-E (Extended) DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +125°C for extended Param No. Device Characteristics Min Typ† Max Units Conditions VDD Note D020E Power-down Base Current (IPD)(2) —0.05 9 μA 2.0 WDT, BOR, Comparators, VREF and T1OSC disabled —0.15 11 μA3.0 —0.35 15 μA5.0 D021E — 1 17.5 μA 2.0 WDT Current(1) —2 19 μA3.0 —3 22 μA5.0 D022E — 42 65 μA 3.0 BOR Current(1) —85 127 μA5.0 D023E — 32 45 μA 2.0 Comparator Current(1), both comparators enabled —60 78 μA3.0 —120 160 μA5.0 D024E — 30 70 μA2.0 CVREF Current(1) (high range) —45 90 μA3.0 —75 120 μA5.0 D025E* — 39 91 μA2.0 CVREF Current(1) (low range) —59 117 μA3.0 —98 156 μA5.0 D026E — 4.5 25 μA 2.0 T1OSC Current(1), 32.768 kHz —5 30 μA3.0 —6 40 μA5.0 D027E — 0.30 12 μA 3.0 A/D Current(1), no conversion in progress —0.36 16 μA5.0 * These parameters are characterized but not tested. † Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD current from this limit. Max values should be used when calculating total current consumption. 2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD. |
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