LMV712TL datasheet(13/22 Pages) TI

номер детали	LMV712TL

подробное описание детали	LMV712-N Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown

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производитель	TI [Texas Instruments]

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LMV712-N

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SNOS534G – MAY 2004 – REVISED MARCH 2010

The circuit in Figure 35 is an improvement to the one in Figure 34 because it provides DC accuracy as well as

AC stability. In this circuit, RF provides the DC accuracy by using feed-forward techniques to connect VIN to RL.

CF and RISO serve to counteract the loss of phase margin by feeding the high frequency component of the output

signal back to the amplifier's inverting input, thereby preserving phase margin in the overall feedback loop.

Increased capacitive drive is possible by increasing the value of CF. This in turn will slow down the pulse

response.

Figure 35.

LATCHUP

CMOS devices tend to be susceptible to latchup due to their internal parasitic SCR (silicon controlled rectifier)

effects. The input and output pins look similar to the gate of the SCR. There is a minimum current required to

trigger the SCR gate lead. The LMV712-N is designed to withstand 150mA surge current on all the pins. Some

resistive method should be used to isolate any capacitance from supplying excess current to the pins. In addition,

like an SCR, there is a minimum holding current for any latchup mode. Limiting current to the supply pins will

also inhibit latchup susceptibility.

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