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LP3987 датащи(PDF) 3 Page - Texas Instruments

номер детали LP3987
подробное описание детали  Micropower DSBGA 150-mA Ultra Low Dropout CMOS Voltage Regulator With Sleep MODE
PDF  21 Pages
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производитель  TI [Texas Instruments]
домашняя страница  http://www.ti.com
Logo TI - Texas Instruments

LP3987 датащи(HTML) 3 Page - Texas Instruments

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LP3987
www.ti.com
SNVS164G – OCTOBER 2001 – REVISED MAY 2013
ORDERING INFORMATION(1)(2)
DSBGA Package
LP3987 Supplied as 250 Units
LP3987 Supplied as 3000 Units
Output Voltage
Grade
Tape and Reel
Tape and Reel
2.5V
LP3987ITL-2.5
LP3987ITLX-2.5
2.6V
LP3987ITL-2.6
LP3987ITLX-2.6
2.8V
STD
LP3987ITL-2.8
LP3987ITLX-2.8
2.85V
LP3987ITL-2.85
LP3987ITLX-2.5
3.0V
LP3987ITL-3.0
LP3987ITLX-3.0
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2)
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1) (2) (3)
VIN
−0.3 to 6.5V
VEN, VMODE
−0.3 to 6.5V
VOUT
−0.3V to(V IN+ 0.3V) ≤ 6.5
Storage Temperature
−65°C to +150°C
ESD (4)
Human Body Model
2KV
Machine Model
200V
Maximum Power Dissipation (5)
θJA (DSBGA small bump)
255°C/W
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltages are with respect to the potential at the GND pin.
(3)
If Military/Aerospace specified devices are required, please contact theTI Sales Office/Distributors for availability and specifications.
(4)
The human body model is 100pF discharged through 1.5k
Ω.
(5)
The Absolute Maximum power dissipation depends on the ambient temperature and can be calculated using the formula:PD = (TJ -
TA)/θJA,Where TJ is the junction temperature, TA is the ambient temperature, and θJA is the junction-to-ambient thermal resistance. For
instant, if VIN in target application is 4.2V and worse case current consumption is 90mA. Therefore PMAX_DISSIPATION = (4.2-2.7)*0.09
=135mW. With PMAX_DISSIPATION is 135mW, TJmax is 125°C and worse case ambient temperature (TA ) in target application is 85°C, θJA
= (125-85)/0.135 = 296°C/W.
Operating Ratings
(1) (2)
VIN
VOUT+ 200mV to 6V
VEN, VMODE
0 to 6.0V
Junction Temperature
−40°C to +125°C
Maximum Power Dissipation (3)
392mW at 25°C
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltages are with respect to the potential at the GND pin.
(3)
The Absolute Maximum power dissipation depends on the ambient temperature and can be calculated using the formula:PD = (TJ -
TA)/θJA,Where TJ is the junction temperature, TA is the ambient temperature, and θJA is the junction-to-ambient thermal resistance. For
instant, if VIN in target application is 4.2V and worse case current consumption is 90mA. Therefore PMAX_DISSIPATION = (4.2-2.7)*0.09
=135mW. With PMAX_DISSIPATION is 135mW, TJmax is 125°C and worse case ambient temperature (TA ) in target application is 85°C, θJA
= (125-85)/0.135 = 296°C/W.
Copyright © 2001–2013, Texas Instruments Incorporated
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