MBR20H100CTG datasheet(1/3 Pages) KERSEMI

номер детали	MBR20H100CTG

подробное описание детали	High Barrier Technology for Improved High Temperature Performance

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производитель	KERSEMI [Kersemi Electronic Co., Ltd.]

домашняя страница	http://www.kersemi.com

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MBR20H90CTG & MBR20H100CTG

www.kersemi.com

1

High Barrier Technology for Improved High Temperature Performance

FEATURES

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching

mode power supplies, freewheeling diodes, dc-to-dc

converters or polarity protection application.

MECHANICAL DATA

Case: TO-220AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

IF(AV)

10 A x 2

VRRM

90 V, 100 V

IFSM

150 A

VF

0.70 V

IR

3.5 µA

TJ max.

175 °C

CASE

PIN 2

PIN 1

PIN 3

TO-220AB

MBR20H90CTG

MBR20H100CTG

1

2

3

MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR20H90CTG

MBR20H100CTG

UNIT

Maximum repetitive peak reverse voltage

VRRM

90

100

V

Working peak reverse voltage

VRWM

90

100

V

Maximum DC blocking voltage

VDC

90

100

V

Maximum average forward rectified current at TC = 155 °C

total device

per diode

IF(AV)

20

10

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

IFSM

150

A

Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz

IRRM

0.5

A

Voltage rate of change (rated VR)

dV/dt

10 000

V/µs

Operating junction and storage temperature range

TJ, TSTG

- 65 to + 175

°C

Аналогичный номер детали - MBR20H100CTG

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	MBR20H100CTG	130Kb / 7P	SWITCHMODE Power Rectifier 100 V, 20 A March, 2007 ??Rev. 4
Vishay Siliconix	MBR20H100CTG	412Kb / 4P	Dual Common-Cathode High-Voltage Schottky Rectifier 25-Mar-08
Kersemi Electronic Co.,...	MBR20H100CTG	487Kb / 7P	SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS
ON Semiconductor	MBR20H100CTG	122Kb / 9P	Switch-mode Power Rectifier January, 2015 ??Rev. 12

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Аналогичное описание - MBR20H100CTG

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SS2PH9	104Kb / 4P	High-Voltage Surface Mount Schottky Barrier Rectifiers High Barrier Technology for Improved High Temperature Performance 19-May-08
	SB1H90	94Kb / 4P	High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance 19-May-08
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	SB5H90	96Kb / 4P	High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance 19-May-08
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	MBR30H90CT	122Kb / 4P	Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance 17-Aug-15
	M10HXX	135Kb / 5P	High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance 16-Mar-16
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MBR20H100CTG датащи(PDF) 1 Page - Kersemi Electronic Co., Ltd.

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Аналогичный номер детали - MBR20H100CTG

Аналогичное описание - MBR20H100CTG

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