18

RF Device Data

Freescale Semiconductor

MRF6VP2600HR6

PRODUCT DOCUMENTATION AND SOFTWARE

Refer to the following documents to aid your design process.

Application Notes

• AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

• EB212: Using Data Sheet Impedances for RF LDMOS Devices

Software

• Electromigration MTTF Calculator

• RF High Power Model

For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &

Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision

Date

Description

0

Mar. 2008

• Initial Release of Data Sheet

1

July 2008

• Removed Capable of Handling 5:1 VSWR bullet, p. 1

plotted data in Fig. 21, Series Equivalent Source and Load Impedance, p. 9

2

Sept. 2008 • Added Note to Fig. 4, Capacitance versus Drain--Source Voltage and Fig. 5, DC Safe Operating Area to de-

note that each side of device is measured separately, p. 5

• Updated Fig. 5, DC Safe Operating Area, to show one side of the device, p. 5

impedance as measured from gate to gate, balanced configuration”, p. 9, 14

2.1

Nov. 2008

drain to drain, balanced configuration”, p. 9, 14

4

May 2009

• Updated bullets in Features section to reflect consistent listing across products, p. 1

• Added thermal data for 352.2 MHz application to Table 2, Thermal Characteristics, p. 1

• Added Typical Performances table for 352.2 MHz application, p. 2

• Added Fig. 28, Test Circuit Component Layout -- 352.2 MHz and Table 7, Test Circuit Component Designations

and Values -- 352.2 MHz, p. 15

• Added Fig. 29, CW Power Gain and Drain Efficiency versus Output Power -- 352.2 MHz p. 16

• Added Fig. 30, Series Equivalent Source and Load Impedance -- 352.2 MHz, p. 17

4.1

June 2009

• Changed “EKME630ELL471MK25S” part number to “MCGPR63V477M13X26--RH”, Table 5, Test Circuit

Component Designations and Values and Table 6, Test Circuit Component Designations and Values —

88--108 MHz, p. 3, 11

• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation,

Tools and Software, p. 20

5

May 2010

• Changed 10--500 MHz to 2--500 MHz in Device Description box, p. 1

• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related

“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1

• Added thermal data for 88--108 MHz application to Thermal Characteristics table, p. 1

• Added Typical Performance table for 88--108 MHz application, p. 2

• Removed Fig. 20, MTTF versus Junction Temperature -- Pulsed and renumbered accordingly, p. 8

• Replaced Fig. 22 Test Circuit Component Layout, Table 6. Test Circuit Component Designations and Values,

the Typical Characteristic curves and Fig. 27 Series Impedance for 88--108 MHz with improved circuit

performance figures. The 88--108 MHz application circuit is also now a more compact size., p. 10--12

5.1

July 2010