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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MMDF2P03HDR2 датащи(PDF) 2 Page - ON Semiconductor |
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MMDF2P03HDR2 датащи(HTML) 2 Page - ON Semiconductor |
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2 / 10 page  MMDF2P03HD http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 1.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 μAdc) Temperature Coefficient (Positive) V(BR)DSS 30 − − 27 − − Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS − − − − 1.0 10 μAdc Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 3.) Gate Threshold Voltage (VDS = VGS, ID = 250 μAdc) Temperature Coefficient (Negative) VGS(th) 1.0 − 1.5 4.0 2.0 − Vdc mV/°C Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 2.0 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) RDS(on) − − 0.170 0.225 0.200 0.300 Ohm Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc) gFS 2.0 3.4 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss − 397 550 pF Output Capacitance Coss − 189 250 Transfer Capacitance Crss − 64 126 SWITCHING CHARACTERISTICS (Note 4.) Turn−On Delay Time (VDD = 15 Vdc, ID = 2.0 Adc, VGS = 4.5 Vdc, RG = 6.0 Ω) td(on) − 16.25 33 ns Rise Time tr − 17.5 35 Turn−Off Delay Time td(off) − 62.5 125 Fall Time tf − 194 390 Turn−On Delay Time (VDD = 15 Vdc, ID = 2.0 Adc, VGS = 10 Vdc, RG = 6.0 Ω) td(on) − 9.0 18 Rise Time tr − 10 20 Turn−Off Delay Time td(off) − 81 162 Fall Time tf − 192 384 Gate Charge See Figure 8 (VDS = 24 Vdc, ID = 2.0 Adc, VGS = 10 Vdc) QT − 14.2 19 nC Q1 − 1.1 − Q2 − 4.5 − Q3 − 3.5 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (Note 3.) (IS = 2.0 Adc, VGS = 0 Vdc) (IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − 1.82 1.36 2.0 − Vdc Reverse Recovery Time See Figure 15 (IS = 2.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/μs) trr − 42.3 − ns ta − 15.6 − tb − 26.7 − Reverse Recovery Stored Charge QRR − 0.044 − μC 1. Negative sign for P−Channel device omitted for clarity. 3. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature. |
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