TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN SILICON TRANSISTOR

Qualified per MIL-PRF-19500/317

T4-LDS-0057 Rev. 2 (081394)

Page 1 of 2

DEVICES

LEVELS

2N2369A

2N2369AUB

2N4449

JAN

2N2369AU

2N2369AUBC *

JANTX

2N2369AUA

JANTXV

JANS

Parameters / Test Conditions

Symbol

Value

Unit

Collector-Emitter Voltage

2N2369A / U / UA

2N4449 / UB / UBC

15

20

Vdc

Emitter-Base Voltage

2N2369A / U / UA

2N4449 / UB / UBC

4.5

6.0

Vdc

Collector-Base Voltage

40

Vdc

Collector-Emitter Voltage

40

Vdc

Total Power Dissipation @

2N2369A; 2N4449

UA, UB, UBC

U

0.36

(1)

0.36

(1, 5)

0.50

(4)

W

Operating & Storage Junction Temperature Range

-65 to +200

°C

THERMAL CHARACTERISTICS

Parameters / Test Conditions

Symbol

Value

Unit

Thermal Resistance, Ambient-to-Case

2N2369A; 2N4449

UA, UB, UBC

U

400

400

(5)

350

°C/W

Note:

1.

2.

3.

4.

5.

Mounted on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads.

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

15

Vdc

Collector-Base Cutoff Current

0.4

μAdc

TO-18 (TO-206AA)

2N2369A

TO-46 (TO-206AB)

2N4449

SURFACE MOUNT

UA

SURFACE MOUNT

UB & UBC

(UBC = Ceramic Lid Version)

SURFACE MOUNT

U (Dual Transistor)