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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRLL2705 датащи(PDF) 2 Page - International Rectifier |
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IRLL2705 датащи(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRLL2705 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.040 VGS = 10V, ID = 3.8A ––– ––– 0.051 Ω VGS = 5.0V, ID = 3.8A ––– ––– 0.065 VGS = 4.0V, ID = 1.9A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 5.1 ––– ––– S VDS = 25V, ID = 1.9A ––– ––– 25 VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– 32 48 ID = 3.8A Qgs Gate-to-Source Charge ––– 3.5 5.3 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– 9.7 14 VGS = 10V, See Fig. 6 and 9 td(on) Turn-On Delay Time ––– 6.2 ––– VDD = 28V tr Rise Time ––– 12 ––– ns ID = 3.8A td(off) Turn-Off Delay Time ––– 35 ––– RG = 6.2Ω tf Fall Time ––– 22 ––– RD = 7.1Ω, See Fig. 10 Ciss Input Capacitance ––– 870 ––– VGS = 0V Coss Output Capacitance ––– 220 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 92 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current µA Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 3.8A, VGS = 0V trr Reverse Recovery Time ––– 58 88 ns TJ = 25°C, IF = 3.8A Qrr Reverse RecoveryCharge ––– 140 210 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics A 30 0.91 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 3.8A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: VDD = 25V, starting TJ = 25°C, L = 15mH RG = 25Ω, IAS = 3.8A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. |
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