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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7811AVPBF датащи(PDF) 2 Page - International Rectifier |
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IRF7811AVPBF датащи(HTML) 2 Page - International Rectifier |
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2 / 6 page  www.irf.com 2 IRF7811AVPbF Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Q oss
Typical values of RDS(on) measured at V GS = 4.5V, QG, QSW and QOSS measured at VGS =5.0V, IF = 15A. Rθ is measured at TJ approximately 90°C Electrical Characteristics Parameter Symbol Min Typ Max Units Drain-to-Source Breakdown Voltage V(BR)DSS 30 ––– ––– V Static Drain-to-Source On-Resistance RDS(on) ––– 11 14 m Ω Gate Threshold Voltage VGS(th) 1.0 ––– 3.0 V ––– ––– 50 µA ––– ––– 20 µA ––– ––– 100 mA Gate-to-Source Leakage Current IGSS ––– ––– ±100 nA Total Gate Charge, Control FET Qg ––– 17 26 nC Total Gate Charge, Synch FET Qg ––– 14 21 VGS = 5.0V, VDS < 100mV Pre-Vth Gate-to-Source Charge Qgs1 ––– 3.4 ––– Post-Vth Gate-to-Source Charge Qgs2 ––– 1.6 ––– Gate-to-Drain ("Miller") Charge Qgd ––– 5.1 ––– Switch Charge (Qgs2 + Qgd)QSW ––– 6.7 ––– Output Charge QOSS ––– 8.1 12 VDS = 16V, VGS = 0 Gate Resistance RG 0.5 ––– 4.4 Ω Turn-On Delay Time td(on) ––– 8.6 ––– ns Rise Time tr ––– 21 ––– Turn-Off Delay Time td(off) ––– 43 ––– Fall Time tf ––– 10 ––– Input Capacitance Ciss ––– 1801 ––– pF Output Capacitance Coss ––– 723 ––– Reverse Transfer Capacitance Crss ––– 46 ––– Diode Characteristics Parameter Symbol Min Typ Max Units Diode Forward Voltage VSD ––– ––– 1.3 V Reverse Recovery Charge (with Parallel Schottsky) f VDS = VGS, ID = 250µA VDS = 30V, VGS = 0V VGS = ± 20V VDS = 24V, ID = 15A, VGS = 5.0V VDS = 24V, VGS = 0V Conditions VGS = 0V, ID = 250µA VGS = 4.5V, ID = 15A d di/dt = 700A/µs , (with 10BQ040) VDD = 16V, VGS = 0V, ID = 15A VGS = 5.0V VDD = 16V ID = 15A Clamped Inductive Load di/dt = 700A/µs VDD = 16V, VGS = 0V, ID = 15A TJ = 25°C, IS = 15A d ,V GS = 0V VDS = 24V, VGS = 0V, TJ = 100°C VGS = 0V VDS = 10V Conditions Drain-to-Source Leakage Current IDSS VDS = 16V, ID = 15A Qrr ––– 43 ––– nC nC ––– 50 ––– Qrr Reverse Recovery Charge f |
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