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ADE7751ARSZ датащи(PDF) 3 Page - Analog Devices

номер детали ADE7751ARSZ
подробное описание детали  Energy Metering IC with On-Chip Fault Detection
PDF  16 Pages
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производитель  AD [Analog Devices]
домашняя страница  http://www.analog.com
Logo AD - Analog Devices

ADE7751ARSZ датащи(HTML) 3 Page - Analog Devices

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REV. 0
–3–
ADE7751
Parameter
Value
Unit
Test Conditions/Comments
LOGIC OUTPUTS
4
F1 and F2
Output High Voltage, VOH
ISOURCE = 10 mA
4.5
V min
DVDD = 5 V
Output Low Voltage, VOL
ISINK = 10 mA
0.5
V max
DVDD = 5 V
CF, FAULT, and REVP
Output High Voltage, VOH
ISOURCE = 5 mA
4V min
DVDD = 5 V
Output Low Voltage, VOL
ISINK = 5 mA
0.5
V max
DVDD = 5 V
POWER SUPPLY
For Specified Performance
AVDD
4.75
V min
5 V – 5%
5.25
V max
5 V + 5%
DVDD
4.75
V min
5 V – 5%
5.25
V max
5 V + 5%
AIDD
3
mA max
Typically 2 mA
DIDD
2.5
mA max
Typically 1.5 mA
NOTES
1See Terminology section for explanation of specifications.
2See plots in Typical Performance Characteristics graphs.
3See Fault Detection section of data sheet for explanation of fault detection functionality.
4Sample tested during initial release and after any redesign or process change that may affect this parameter.
Specifications subject to change without notice.
TIMING CHARACTERISTICS
1, 2
Parameter
Value
Unit
Test Conditions/Comments
t1
3
275
ms
F1 and F2 Pulsewidth (Logic Low)
t2
See Table III
sec
Output Pulse Period. See Transfer Function section.
t3
1/2 t2
sec
Time Between F1 Falling Edge and F2 Falling Edge
t4
3
90
ms
CF Pulsewidth (Logic High)
t5
See Table IV
sec
CF Pulse Period. See Transfer Function section.
t6
CLKIN/4
sec
Minimum Time Between F1 and F2 Pulse
NOTES
1Sample tested during initial release and after any redesign or process change that may affect this parameter.
2See Figure 1.
3The pulsewidths of F1, F2, and CF are not fixed for higher output frequencies. See Frequency Outputs F1 and F2 section.
Specifications subject to change without notice.
.t2
.t3
t4
.t5
.t6
t1
F1
F2
CF
Figure 1. Timing Diagram for Frequency Outputs
(AVDD = DVDD = 5 V
5%, AGND = DGND = 0 V, On-Chip Reference, CLKIN = 3.58 MHz,
TMIN to TMAX = –40 C to +85 C.)



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