IRFS730B datasheet(2/9 Pages) KERSEMI

2 / 9 page

(Note 4)

(Note 4, 5)

(Note 4)

Electrical Characteristics

TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 19mH, IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 5.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300

µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

400

∆BV

DSS

∆T

Breakdown Voltage Temperature

Coefficient

ID = 250 µA, Referenced to 25°C

0.4

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 400 V, VGS = 0 V

µA

VDS = 320 V, TC = 125°C

100

µA

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

100

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

-100

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

2.0

4.0

RDS(on)

Static Drain-Source

On-Resistance

VGS = 10 V, ID = 2.75 A

0.83

1.0

Ω

gFS

Forward Transconductance

VDS = 40 V, ID = 2.75 A

4.5

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

790

1000

Coss

Output Capacitance

100

Crss

Reverse Transfer Capacitance

Switching Characteristics

td(on)

Turn-On Delay Time

VDD = 200 V, ID = 5.5 A,

RG = 25 Ω

Turn-On Rise Time

120

td(off)

Turn-Off Delay Time

180

Turn-Off Fall Time

110

Total Gate Charge

VDS = 320 V, ID = 5.5 A,

VGS = 10 V

Qgs

Gate-Source Charge

4.3

Qgd

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

5.5

ISM

Maximum Pulsed Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 5.5 A

1.5

trr

Reverse Recovery Time

VGS = 0 V, IS = 5.5 A,

dIF / dt = 100 A/µs

265

Qrr

Reverse Recovery Charge

2.32

µC

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