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STM32F050K6 датащи(PDF) 41 Page - STMicroelectronics |
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STM32F050K6 датащи(HTML) 41 Page - STMicroelectronics |
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41 / 97 page ![]() STM32F050xx Electrical characteristics Doc ID 023683 Rev 1 41/97 6.3.4 Embedded reference voltage The parameters given in Table 19 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 15: General operating conditions. VPVD5 PVD threshold 5 Rising edge 2.57 2.68 2.79 V Falling edge 2.47 2.58 2.69 V VPVD6 PVD threshold 6 Rising edge 2.66 2.78 2.9 V Falling edge 2.56 2.68 2.8 V VPVD7 PVD threshold 7 Rising edge 2.76 2.88 3 V Falling edge 2.66 2.78 2.9 V VPVDhyst (2) PVD hysteresis - 100 - mV IDD(PVD) PVD current consumption - 0.15 0.26 µA 1. Data based on characterization results only, not tested in production. 2. Guaranteed by design, not tested in production. Table 18. Programmable voltage detector characteristics (continued) Symbol Parameter Conditions Min(1) Typ Max(1) Unit Table 19. Embedded internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.16 1.2 1.25 V –40 °C < TA < +85 °C 1.16 1.2 1.24(1) 1. Data based on characterization results, not tested in production. V TS_vrefint (2) 2. Shortest sampling time can be determined in the application by multiple iterations. ADC sampling time when reading the internal reference voltage - 5.1 17.1(3) 3. Guaranteed by design, not tested in production. µs ΔVREFINT Internal reference voltage spread over the temperature range VDDA = 3 V ±10 mV - - 10(3) mV TCoeff Temperature coefficient - - 100(3) ppm/°C |
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