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DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

NPN SILICON RF TRANSISTOR

2SC5606

NPN SILICON RF TRANSISTOR FOR

LOW NOISE · HIGH-GAIN AMPLIFICATION

3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

Document No. PU10781EJ01V0DS (1st edition)

(Previous No. P14658EJ3V0DS00)

Date Published August 2009 NS

Printed in Japan

1999, 2009

FEATURES

• Suitable for high-frequency oscillation

• 3-pin ultra super minimold (19, 1608 PKG) package

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Supplying Form

2SC5606

2SC5606-A

50 pcs (Non reel)

• 8 mm wide embossed taping

2SC5606-T1

2SC5606-T1-A

3-pin ultra super minimold

(19, 1608 PKG) (Pb-Free)

3 kpcs/reel

• Pin 3 (collector) face the perforation side of

the tape

Remark To order evaluation samples, please contact your nearby sales office.

The unit sample quantity is 50 pcs.

°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

15

V

Collector to Emitter Voltage

3.3

V

Emitter to Base Voltage

1.5

V

Collector Current

35

mA

Total Power Dissipation

Note

115

mW

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C

Note Mounted on 1.08 cm

2

× 1.0 mm (t) glass epoxy substrate

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