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2SC5008 датащи(PDF) 4 Page - Renesas Technology Corp

номер детали 2SC5008
подробное описание детали  NPN SILICON EPITAXIAL TRANSISTOR
PDF  12 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5008 датащи(HTML) 4 Page - Renesas Technology Corp

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2SC5008
2
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0
µAVCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0
µAVEB = 1 V, IC = 0
DC Current Gain
hFE
80
160
VCE = 3 V, IC = 5 mA*1
Gain Bandwidth Product
fT
5.5
8.0
GHz
VCE = 3 V, IC = 5 mA
Feed-back Capacitance
Cre
0.3
0.7
pF
VCB = 3 V, IE = 0, f = 1 MHz*2
Insertion Power Gain
|S21e|2
5.5
7.5
dB
VCE = 3 V, IC = 5 mA, f = 2 GHz
Noise Figure
NF
1.9
3.2
dB
VCE = 3 V, IC = 5 mA, f = 2 GHz
*1 Pulse Measurement PW
≤ 350
µs, Duty Cycle ≤ 2 %
*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance
bridge.
hFE Classification
RANK
FB
Marking
44
hFE
80 to 160



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