DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

NPN SILICON RF TRANSISTOR

2SC4703

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

3-PIN POWER MINIMOLD

The mark

•

•

•

• shows major revised points.

Document No. PU10339EJ01V1DS (1st edition)

Date Published May 2003 CP(K)

Printed in Japan

©

©

©

DESCRIPTION

This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface

mount type plastic package, power minimold (SOT-89).

FEATURES

µV/75Ω

2

× 0.7 mm (t) ceramic substrate)

• Small package : 3-pin power minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC4703

25 pcs (Non reel)

• 12 mm wide embossed taping

2SC4703-T1

1 kpcs/reel

• Collector face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 25 pcs.

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

25

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

2.5

V

Collector Current

150

mA

Total Power Dissipation

Note

1.8

W

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C

Note Mounted on double-sided copper-clad 16 cm

2

× 0.7 mm (t) ceramic substrate