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2SC4228 датащи(PDF) 4 Page - Renesas Technology Corp

номер детали 2SC4228
подробное описание детали  NPN EPITAXIAL SILICON RF TRANSISTOR
PDF  9 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC4228 датащи(HTML) 4 Page - Renesas Technology Corp

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Data Sheet PU10452EJ01V0DS
2
2SC4228
ELECTRICAL CHARACTERISTICS (TA = +25
°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0 mA
−
−
1.0
µA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
−
−
1.0
µA
DC Current Gain
hFE
Note 1
VCE = 3 V, IC = 5 mA
50
100
250
−
RF Characteristics
Gain Bandwidth Product
fT
VCE = 3 V, IC = 5 mA, f = 2 GHz
5.5
8.0
–
GHz
Insertion Power Gain
S21e2 VCE = 3 V, IC = 5 mA, f = 2 GHz
5.5
7.5
−
dB
Noise Figure
NF
VCE = 3 V, IC = 5 mA, f = 2 GHz
−
1.9
3.2
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 3 V, IE = 0 mA, f = 1 MHz
−
0.3
0.7
pF
Notes 1. Pulse measurement: PW
≤ 350
µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
R43
R44
R45
Marking
R43
R44
R45
hFE Value
50 to 100
80 to 160
125 to 250



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