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2SC4095 датащи(PDF) 4 Page - Renesas Technology Corp

номер детали 2SC4095
подробное описание детали  MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
PDF  10 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC4095 датащи(HTML) 4 Page - Renesas Technology Corp

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2SC4095
TYPICAL CHARACTERISTICS (TA = 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
0
10
20
50
100
200
50
1
5
10
50
0.5
100
150
TA-Ambient Temperature-
°C
IC-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 6 V
IC-Collector Current-mA
INSERTION GAIN vs.
COLLECTOR CURRENT
0.06
0.2
0.1
1
1.0
12
5
10
20
VCB-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1.0 GHz
0
2
4
6
10
12
14
16
18
8
0.2
1
0.5
2
5
10
20 30
0
10
20
30
0.1
0.2
0.5
1.0
2.0
3.0
f-Frequency-GHz
MAXIMUM AVAILABLE GAIN, INSERTION
GAIN vs. FREQUENCY
VCE = 6 V
fC = 10 mA
5
2
10
30
20
12
5
10
20
30
IC-Collector Current-mA
GAIN BANDWIDTH PRODUUT vs.
COLLECTOR CURRENT
VCE = 6 V
Free Air
|S21e|2
MAG
VCE = 6 V
f = 1.0 GHz
f = 2.0 GHz
0.5



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